MUMBAI, India, Sept. 28 -- Intellectual Property India has published a patent application (202647108670 A) filed by Hitachi Energy Ltd on September 10, 2026, for Unit Cell Of A Multi-Trench Semiconductor Device And Semiconductor Device.
Inventors include Wirths, Stephan; Knoll, Lars; Mihaila, Andrei; Romano, Gianpaolo; Donato, Nazareno; Naydenov, Kaloyan Ivaylov; and Udrea, Florin.
The application for the patent was published on September 25, 2026, under issue no. 39/2026.
Abstract: The invention relates to a unit cell (10) of a multi-trench semiconductor device, wherein the unit cell (10) is configured as vertical field effect transistor cell having a carrier transport axis (14) defined between drain and source, wherein in a direction of a gate contact stripe axis (24) being perpendicular to the carrier transport axis (14), the unit cell (10) comprises on two opposite edges each a gate-recess (26) extending vertically through an n+source region (20) and a p-well region (18) into a body layer (16), such that when multiple unit cells (10) are arranged in a row along the gate contact stripe axis (24) next two each other for forming the multi-trench semiconductor device a gate trench is formed by two gaterecesses (26) of two neighbouring unit cells (10), and wherein the unit cell (10) comprises in addition a protective p+layer (32), the protective p+layer (32) being continuous in the direction of the gate contact stripe axis (24) and being arranged in the body layer (16) below the gate-recess (26). Furthermore, the invention relates to a multi-trench semiconductor device, comprising multiple of the above unit cells (10). Furthermore, the invention relates to a method for producing the above multi-trench semiconductor device.
Disclaimer: Curated by HT Syndication.
