MUMBAI, India, Sept. 22 -- Intellectual Property India has published a patent application (202647108784 A) filed by Hitachi Energy Ltd on September 10, 2026, for Unit Cell Of A Multi-Trench Semiconductor Device And Semiconductor Device.
Inventors include Wirths, Stephan; Knoll, Lars; Mihaila, Andrei; Romano, Gianpaolo; Naydenov, Kaloyan Ivaylov; Donato, Nazareno; and Udrea, Florin.
The application for the patent was published on September 18, 2026, under issue no. 38/2026.
Abstract: The invention relates to a unit cell (10) of a multi-trench semiconductor device, wherein the unit cell (10) is configured as vertical field effect transistor cell having a carrier transport axis (14) defined between drain and source, wherein in a direction of a gate contact stripe axis (24) being perpendicular to the carrier transport axis (14), the unit cell (10) comprises on two opposite edges each a gate-recess (26) extending vertically through the n+source region (20) and the p-well region (18), wherein along a fin elongation axis (30) the unit cell (10) comprises on two opposite edges each at least one source-recess (32) extending vertically through the n+source region (20), wherein the vertical depth of the source-recess (32) is different to the vertical depth of the gate-recess (26), and wherein a bottom of the sourcerecess (32) is formed by the p-source region (22) of the source structure. Furthermore, the invention relates to a multi-trench semiconductor device, comprising multiple of the above unit cells (10). Furthermore, the invention relates to a method for producing the above multi-trench semiconductor device.
Disclaimer: Curated by HT Syndication.
