MUMBAI, India, Aug. 12 -- Intellectual Property India has published a patent application (202647092923 A) filed by Qualcomm Incorporated on July 31, 2026, for Trench Shielding Within Photoimageable Dielectric (pid) Material.
Inventors include Shin, Heun Gun; and Salmon, Jay Scott.
The application for the patent was published on August 07, 2026, under issue no. 32/2026.
Abstract: In an aspect, an integrated circuit (IC) includes a photoimageable dielectric (PID), a transmission line disposed within the PID, and at least one continuous conductive shield disposed within the PID to reduce leakage of a signal transmitted along the transmission line beyond a space defined by at least one continuous conductive shield. In an aspect, the transmission line is a horizontal transmission line, and a first continuous conductive shield is disposed along a first side of the horizontal transmission line and a second continuous conductive shield is disposed along a second side opposite the first side of the horizontal transmission line. In an aspect, the transmission line is a vertical transmission line, and the continuous conductive shield is a cylindrical conductive shield concentric about the vertical transmission line.
Disclaimer: Curated by HT Syndication.
