MUMBAI, India, June 30 -- Intellectual Property India has published a patent application (202641075171 A) filed by Indian Institute Of Science on June 17, 2026, for Three-State Spintronic Memory Device And Method Thereof.
Inventors include Bhagwati Prasad; and Rohith K M S.
The application for the patent was published on June 26, 2026, under issue no. 26/2026.
Abstract: ABSTRACT THREE STATE SPINTRONIC MEMORY DEVICE AND METHOD THEREOF The present disclosure provides three state spintronic memory device and method thereof. The 5 method comprises applying an in-plane Spin Orbit Torque (SOT) current through a metal layer adjacent to a free layer of a Magnetic Tunnel Junction (MTJ), and applying a vertical Spin Transfer Torque (STT) current through a stack of the MTJ. The method generates a skyrmionic intermediate magnetic state in the free layer based on a predefined current sequence. The predefined current sequence comprises applying the SOT current to cant a magnetization of the 10 free layer, applying the SOT current overlapping with the STT current to initiate a skyrmion nucleation, and applying the STT current to stabilize the skyrmionic intermediate magnetic state. The method determines a magnetic state of the MTJ as one of a parallel (P), an antiparallel (AP), or the skyrmionic (Sk) intermediate magnetic state based on a measured resistance of the MTJ. 15 Fig. 1
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