MUMBAI, India, Sept. 22 -- Intellectual Property India has published a patent application (202631098914 A) filed by National Institute Of Technology, Rourkela on August 15, 2026, for System And Method For Noise-Based Defect Spectroscopy And Reliability Assessment Of Low- Dimensional Materials.
Inventors include Jagadis Prasad Nayak; Smrutirekha Sahoo; and Gopi Nath Daptary.
The application for the patent was published on September 18, 2026, under issue no. 38/2026.
Abstract: ABSTRACT SYSTEM AND METHOD FOR NOISE-BASED DEFECT SPECTROSCOPY AND RELIABILITY ASSESSMENT OF LOW-DIMENSIONAL MATERIALS The present invention relates to an integrated noise-based electrical defect spectroscopy system and characterization framework for non-destructive investigation of defect dynamics in two-dimensional, low-dimensional, and bulk electronic materials. The system employs controlled Fermi-level modulation and temperature-dependent low-frequency electrical noise measurements to acquire voltage or resistance fluctuation signals from a device under test. Power spectral density (PSD) analysis is performed to extract defect-related parameters including defect density, trap-state distribution, activation energy, trapping-detrapping kinetics, and fluctuation mechanisms. The framework further generates energy-resolved defect maps, material quality indices, and predictive reliability metrics for device lifetime assessment. The invention transforms low-frequency electrical noise from a parasitic phenomenon into a quantitative diagnostic tool for material certification, defect engineering, process optimization, quality control, and reliability assessment across advanced electronic and sensing devices.
Disclaimer: Curated by HT Syndication.
