MUMBAI, India, Sept. 22 -- Intellectual Property India has published a patent application (202647101952 A) filed by Kokusai Electric Corporation on August 24, 2026, for Substrate Processing Method, Method For Manufacturing Semiconductor Device, Program, And Substrate Processing Device.
Inventors include Nakazawa Hiroki; Ishibashi Kiyohisa; and Ogawa Arito.
The application for the patent was published on September 18, 2026, under issue no. 38/2026.
Abstract: According to the present invention, a film containing a first element and a second element is formed on a substrate by performing: a first step for forming a first layer containing the first element by performing, a first number of times, a cycle that includes (a-1) a step for supplying a first raw-material gas containing the first element to the substrate, and (a-2) a step for supplying a first reaction gas to the substrate; and a second step for forming a second layer containing the first element and the second element by performing, a second number of times, a cycle that includes (b-1) a step for supplying a second raw-material gas containing the first element and a first halogen element to the substrate, (b-2) a step for supplying a third raw-material gas containing a second halogen element and the second element, which is not contained in the first layer, to the substrate after the supply of the second raw-material gas in step (b-1) has been performed for a first period, and (b-3) a step for supplying a second reaction gas to the substrate after the supply of the third raw-material gas in (b-2) has been performed for a second period.
Disclaimer: Curated by HT Syndication.
