MUMBAI, India, Sept. 14 -- Intellectual Property India has published a patent application (202617066805 A) filed by Soitec on May 27, 2026, for Substrate And Production Method Therefor For Producing A Wide-Bandgap Bidirectional Switch.
Inventors include Guiot, Eric; Picun, Gonzalo; Boudet, Thierry; and Schwarzenbach, Walter.
The application for the patent was published on September 11, 2026, under issue no. 37/2026.
Abstract: The invention relates to a substrate and the production method therefor for producing a bidirectional switch, the method comprising: - transferring, to the front face of a carrier substrate, a first seed layer (21) made of a wide-bandgap polar semiconductor material; - transferring, to the rear face of the carrier substrate, a second seed layer (22) made of the wide-bandgap polar semiconductor material, wherein these transfers are carried out so as to expose a surface of a first type (F1) of the first seed layer (21) and a surface of the first type (F1) of the second seed layer (22), and wherein a surface of a second type (F2) of the first seed layer (21) and a surface of the second type (F2) of the second seed layer (22) are at the interface with the front face and the rear face of the support substrate, respectively.
Disclaimer: Curated by HT Syndication.
