MUMBAI, India, Nov. 2 -- Intellectual Property India has published a patent application (202617095166 A) filed by International Business Machines Corporation on August 06, 2026, for Strained Ohmic Contact High Electron Mobility Transistor.
Inventors include Zota, Bogdan; and Cha, Eunjung.
The application for the patent was published on October 30, 2026, under issue no. 44/2026.
Abstract: One or more systems, devices and/or methods of fabrication provided herein relate to forming a strained ohmic contact on a high electron mobility transistor (HEMT) semiconductor device. According to one embodiment, a plurality of semiconductor layers that comprises a barrier layer on top of a quantum well layer is formed and, a T-gate is placed above a plurality of semiconductor layers and between a first doped contact layer and a second doped contact layer. According to another embodiment, a tensile strained (TS) contact layer is deposited on the first and the second doped contact layer, wherein the TS contact layer is a stiff metal deposited with tensile internal stress, and wherein a linear expansion coefficient as a function of temperature of the stiff metal is larger than the linear expansion coefficient of the plurality of semiconductor layers, to induce a reduction of tunneling resistance through the barrier layer.
Disclaimer: Curated by HT Syndication.
