MUMBAI, India, Oct. 5 -- Intellectual Property India has published a patent application (202621099783 A) filed by Indian Institute Of Technology Indore on August 18, 2026, for Static Random-Access Memory Cell With Neutralization Transistors And Method Of Operation Thereof.
Inventors include Chouhan, Seema; Sharma, Pratham; and Vishvakarma, Dr. Santosh Kumar.
The application for the patent was published on October 02, 2026, under issue no. 40/2026.
Abstract: ABSTRACT OF THE INVENTION STATIC RANDOM-ACCESS MEMORY CELL WITH NEUTRALIZATION TRANSISTORS AND METHOD OF OPERATION THEREOF A static random-access memory (SRAM) cell (200) is disclosed. The SRAM cell (200) includes a bistable storage element (202) having a first inverter (204) and a second inverter (206) cross-coupled between a node Q (208) and a node QB (210). A first and second write access transistors selectively couples the node Q (208) the node QB (210) to a first write bit line (222) and a second write bit line (224), with both write access transistors controlled by a write word line (220). A p-type neutralization transistor (212) and an n-type neutralization transistor (214) are connected in parallel between the node Q (208) and the node QB (210). A read transistor (226), controlled by a read word line (228), couples a read bit line (230) through an electrically isolated read path. The control lines provide a first neutralization phase, a selective-neutralization phase, and a data-write phase.
Disclaimer: Curated by HT Syndication.
