MUMBAI, India, Aug. 31 -- Intellectual Property India has published a patent application (202621082134 A) filed by Indian Institute Of Technology Bombay on July 03, 2026, for Single Pulse Reading Method To Measure Activation Energy In Nand Flash Memory Devices.
Inventors include Mondal, Sandip; and Singh, Dharmendra Kumar.
The application for the patent was published on August 28, 2026, under issue no. 35/2026.
Abstract: A method and system for extracting activation energy of a NAND flash memory device are disclosed. The method includes subjecting the NAND flash memory device to selected baking temperatures and baking times, acquiring fail bit count data using Single Pulse Reading based on a single read operation, determining a median fail bit count for at least one memory region, determining a time constant corresponding to a selected median fail bit count threshold, and extracting activation energy using an Arrhenius relation. The fail bit count data may indicate block-wise, page-wise, or layer-wise variation, and may be used to determine retention fail rate, degradation rate, endurance degradation rate, and thermal stability. The Single Pulse Reading reduces measurement time and read- disturb stress relative to threshold-voltage-distribution-based characterization while preserving a technical indication of thermally activated charge loss in the NAND flash memory device.
Disclaimer: Curated by HT Syndication.
