MUMBAI, India, June 24 -- Intellectual Property India has published a patent application (202514089208 A) filed by Proasia Semiconductor Corporation on September 18, 2025, for Silicon Carbide Metal-Oxide-Semiconductor Fieldeffect Transistor And Manufacturing Method Thereof.
Inventors include Wang, Pei-Jen; and Huang, Pin-Yen.
The application for the patent was published on June 12, 2026, under issue no. 24/2026.
Abstract: The invention provides a method for manufacturing a silicon carbide metal-oxidesemiconductor field-effect transistor, which includes the following steps: providing a SiC substrate; forming an N-type SiC epitaxial layer with a top surface on the SiC substrate; forming two doped structures in the N-type SiC epitaxial layer adjacent to the top surface, wherein each doped structure includes a P-type well, an N+ doped region, and a P+ doped region, the N+ doped region is located in the P-type well, and the P+ doped region is located in the P-type well and adjacent to the N+ doped region; depositing a silicon-rich nitride film on the top surface; depositing a gate oxide layer on the silicon-rich nitride film, wherein the gate oxide layer and the Ntype SiC epitaxial layer are insulated by the silicon-rich nitride film; performing a post- oxidation annealing process for the gate oxide layer; and forming a gate structure on the gate oxide layer.
Disclaimer: Curated by HT Syndication.
