MUMBAI, India, Oct. 5 -- Intellectual Property India has published a patent application (202647114429 A) filed by Soitec; and Commissariat A L'Energie Atomique Et Aux Energies on September 24, 2026, for Silicon Carbide-Based Composite Structure Having Good Vertical Electrical Conduction.
Inventors include Le Cunff, Malle; Gaudin, Gweltaz; Roi, Jrmy; Gelineau, Guillaume; and Widiez, Julie.
The application for the patent was published on October 02, 2026, under issue no. 40/2026.
Abstract: The invention relates to a composite structure having a front face and a rear face extending parallel to a main plane, which structure comprises: - a useful layer of single-crystal silicon carbide, a free face of which constitutes the front face, which layer has a first concentration of N-type dopants; - a carrier substrate made of polycrystalline silicon carbide, a free face of which constitutes the rear face, which substrate has a second concentration of N-type dopants, the second concentration being higher than the first concentration; - an intermediate region extending along the main plane and including an interface zone between an assembled face of the useful layer and an assembled face of the carrier substrate; the composite structure being characterised in that the intermediate region comprises inclusions of single- crystal silicon carbide in direct contact with the useful layer and extending, in a direction normal to the main plane, between grains of the carrier substrate, the inclusions having a third concentration of N-type dopants which is between the first concentration and the second concentration. The invention also relates to a method for producing such a composite structure.
Disclaimer: Curated by HT Syndication.
