MUMBAI, India, Oct. 26 -- Intellectual Property India has published a patent application (202617092118 A) filed by Minebea Power Semiconductor Device Inc. on July 29, 2026, for Semiconductor Device.
Inventors include Nanjo Hiroyuki; Utsumi Tomoyuki; Sakurai Kenji; and Yuguchi Takahiko.
The application for the patent was published on October 23, 2026, under issue no. 43/2026.
Abstract: A semiconductor device (100) comprises: a cascode connection unit (110) configured by including a first semiconductor element (101) (HVNM1), a second semiconductor element (102) (HVNM2), a first resistor (111) (R1), a first Zener diode (VZ1) (112), and a first high-voltage diode (115); and an erroneous-ON prevention circuit (120). The cascode connection unit (110) is configured by the drain of the first semiconductor element (101) (HVNM1) and the source of the second semiconductor element (102) (HVNM2) being cascode-connected, the first resistor (111) (R1) and the first Zener diode (VZ1) (112) connecting the gate and source of the second semiconductor element (102) (HVNM2), and the first high-voltage diode (115) connecting the gate of the first semiconductor element (101) (HVNM1) and the gate of the second semiconductor element (102) (HVNM2). The erroneous ON prevention circuit (120) is a circuit for preventing malfunctions caused by walkout current in the cascode connection unit (110).
Disclaimer: Curated by HT Syndication.
