MUMBAI, India, Sept. 22 -- Intellectual Property India has published a patent application (202647103295 A) filed by Hitachi Energy Ltd on August 27, 2026, for Semiconductor Device With An Integrated Heterojunction Diode And Method For Manufacturing.
Inventors include Wirths, Stephan; Knoll, Lars; Mihaila, Andrei; Romano, Gianpaolo; Naydenov, Kaloyan Ivaylov; Donato, Nazareno; and Udrea, Florin.
The application for the patent was published on September 18, 2026, under issue no. 38/2026.
Abstract: The invention relates to a semiconductor device (10) with an integrated heterojunc- tion diode (12) comprising: - a substrate (14) of a first conductive type acting as drain region, - a first crystalline layer (16) of a second conductivity type formed on the sub- strate (14) and acting as drift region, and - a source structure (18) provided on the first crystalline layer (16), the source structure (18) comprising a p-well region (20), an n+source region (22), and a p+short region (24), wherein a recess (26) comprising a bottom crystalline layer (28) is formed in the source structure (18), the recess (26) extending vertically through the p+short region (24) such that for forming the integrated heterojunction diode (12) the bottom crys- talline layer (28) of the recess (26) is in contact with a) the first crystalline layer (16), or b) an additional semiconductor layer (42) being formed on the first crystalline layer (16), and wherein the additional semiconductor layer (42) is of the same conductivity type as the first crystalline layer (16). Furthermore, the invention relates to a method for manufacturing the above semi- conductor device (10).
Disclaimer: Curated by HT Syndication.
