MUMBAI, India, June 26 -- Intellectual Property India has published a patent application (202641072083 A) filed by Indian Institute Of Science on June 10, 2026, for Semiconductor Device For Enhanced Reliability And Breakdown Performance.
Inventors include Dar, Aadil Bashir; and Shrivastava, Mayank.
The application for the patent was published on June 19, 2026, under issue no. 25/2026.
Abstract: The semiconductor device (100A) includes a first dielectric layer (104) disposed over a substrate (102), and a channel layer (106) disposed over the first dielectric layer (104). The channel layer (106) is formed of an alloyed transition metal dichalcogenide (TMD) material, wherein the TMD material includes a base TMD lattice alloyed with one or more foreign atoms. A source terminal (110) and a drain terminal (108) are disposed in contact with the channel layer (106). The concentration and substitution of the one or more foreign atoms within the TMD lattice are specifically configured to modify the structural and interfacial properties of the channel layer (106). The configuration reduces field-induced charge trapping at a dielectric-channel interface, minimizes threshold voltage shifts, suppresses off-state leakage, and provides a higher breakdown voltage tolerance under prolonged electrical stress conditions.
Disclaimer: Curated by HT Syndication.
