MUMBAI, India, Sept. 22 -- Intellectual Property India has published a patent application (202641110061 A) filed by Vellore Institute Of Technology on September 14, 2026, for Rram-Based In-Memory Division System Using Reciprocal Approximation And Differential Conductance Encoding.
Inventors include Vishal; Kittur Harish Mallikarjun; and Garv R Jain.
The application for the patent was published on September 18, 2026, under issue no. 38/2026.
Abstract: ABSTRACT RRAM-BASED IN-MEMORY DIVISION SYSTEM USING RECIPROCAL APPROXIMATION AND DIFFERENTIAL CONDUCTANCE ENCODING A resistive random-access memory (RRAM) based in-memory division system (100) comprises a normalisation unit (102) producing a mantissa and a scale factor from a divisor, a segment identification unit (104) producing a segment index, and a coefficient memory (106) storing a slope coefficient and an intercept coefficient of a piecewise-linear approximation of a reciprocal of the mantissa. A reciprocal computation block (108) comprises a first RRAM cell (110) and a second RRAM cell (112) forming a complementary pair encoding a signed slope coefficient, a differential output block (114) subtracting currents of the pair, and a summing amplifier (116) combining the differential output with a reference voltage representing the intercept coefficient. An in-memory multiplication block (118) comprises a third RRAM cell (120) programmed to a conductance representing a dividend. A scaling unit (122) applies an inverse of the scale factor to produce an approximate division result. (Fig. 1)
Disclaimer: Curated by HT Syndication.
