MUMBAI, India, Aug. 31 -- Intellectual Property India has published a patent application (202641101041 A) filed by Sri Eshwar College Of Engineering on August 20, 2026, for Robust Sixteen-Transistor Static Random Access Memory (16t Sram) Cell With Enhanced Stability And Process-Voltage-Temperature (pvt) Tolerance In 40nm Cmos Technology.
Inventors include Dr Thamaraimanalan T; Ms. Sharmila Parveen M; Mr Hariharan S; and Ms. Mohanapriya K.
The application for the patent was published on August 28, 2026, under issue no. 35/2026.
Abstract: The present invention discloses a highly robust and stability-optimized sixteen-transistor (16T) Static Random Access Memory (SRAM) cell designed and analyzed at the 40 nm CMOS technology node using Synopsys Custom Compiler. The invention introduces an improved cell architecture that enhances read and write stability, noise tolerance, and process-voltage-temperature (PVT) resilience compared to traditional 6T, 12T, and 14T SRAM configurations. The cell integrates additional transistors for read/write decoupling, leakage control, and internal node stabilization, thereby mitigating read disturb and write failure under deep- submicron scaling. A comprehensive simulation methodology, including DC, AC, transient, and 27-corner PVT analyses, has been implemented to ensure operational robustness under extreme environmental and manufacturing variations. The DC analysis confirms improved write margin and stable voltage transfer characteristics, while transient analysis validates a write access time of 0.9 ns with smooth data retention transitions. The AC analysis establishes a consistent low-frequency gain of –5 dB and strong attenuation characteristics at high frequencies, confirming reliable signal propagation across the read/write cycle. The proposed cell achieves a 7.53% enhancement in write ability and a 10% reduction in write delay compared to the Enhanced Write Stability (EWS-16T) SRAM design, demonstrating both superior performance and energy efficiency. Through transistor-level optimization and noise margin enhancement, the design achieves improved read and write Static Noise Margins (SNM), minimized leakage current, and consistent operation across all 27 PVT corners. The invention is particularly applicable to high-speed, low-power, and radiation-tolerant VLSI systems, including aerospace, automotive, and embedded electronics. Its enhanced PVT tolerance and stability make it a promising candidate for next-generation memory arrays requiring low-voltage, high-reliability operation under variable conditions. The proposed 16T SRAM cell thus establishes a significant advancement in CMOS-based memory design by uniting structural robustness, improved write efficiency, and environmental adaptability within a compact and energy-efficient layout.
Disclaimer: Curated by HT Syndication.
