MUMBAI, India, Aug. 31 -- Intellectual Property India has published a patent application (202641099762 A) filed by Amrita Vishwa Vidyapeetham on August 18, 2026, for Resistive Random Access Memory (rram) Control System And Method Thereof.
Inventors include Siddireddy, Kapileswarreddy; and Hegde, Ganapathi.
The application for the patent was published on August 28, 2026, under issue no. 35/2026.
Abstract: A resistive random access memory (RRAM) system (100) and method (400) are disclosed for performing non-volatile memory operations. The system (100) includes a memory interface (102) for receiving address, command, and data signals from a host processor (104). The system (100) performs SET and RESET operations, determines resistance variation of memory cells during successive programming cycles, controls subsequent programming operations based on the determined resistance variation, detects and corrects memory errors, and monitors power consumption and operating temperature during memory operations. The architecture provides physical modeling of switching and resistance characteristics together with reliability control for memory operation, with an accuracy improvement of 30–40% over behavioral models, stuck-at fault coverage exceeding 99%, and transition fault coverage exceeding 98%. The disclosed system (100) can be implemented in semiconductor memory devices for artificial intelligence accelerators, neuromorphic computing systems, secure storage systems, Internet of Things devices, and embedded memory applications.
Disclaimer: Curated by HT Syndication.
