MUMBAI, India, July 13 -- Intellectual Property India has published a patent application (202621016592 A) filed by Mr. Hitesh Kumar; Dr. Kaushal Kumar Nigam; Dr. Chitrakant Sahu; Mr. Bandi Venkata Chandan; and Mr. Ashish Patle on February 14, 2026, for Recessed Dual-Material Gate Mos-Hemt Biosensor With Passivation-Defined Sensing Cavity.
Inventors include Mr. Hitesh Kumar; Dr. Kaushal Kumar Nigam; Dr. Chitrakant Sahu; Mr. Bandi Venkata Chandan; and Mr. Ashish Patle.
The application for the patent was published on July 10, 2026, under issue no. 28/2026.
Abstract: The present invention relates to a biosensing field-effect transistor based on a recessed metal–oxide–semiconductor high electron mobility transistor (MOS-HEMT) architecture for label-free detection of biomolecules. The device comprises a substrate supporting a multilayer heterostructure including a nucleation layer, buffer layer, spacer layer, and barrier layer configured to form a high-mobility conductive channel at a heterointerface. A recessed region is formed in the barrier beneath a gate region to reduce barrier thickness and enhance electrostatic coupling from a sensing interface to the conductive channel. A gate dielectric is disposed over the recessed region, and a dual-material gate electrode comprising a first gate segment and a second gate segment having different work functions is provided over the gate dielectric to engineer the lateral electric-field distribution and improve channel modulation. A passivation layer covers non-sensing regions and defines a sensing cavity exposing the gate metal, wherein a functionalization layer immobilizes target biomolecules and, in electrolyte operation, a Stern layer forms at the interface. Surface charge associated with biomolecule binding modulates the conductive channel to produce a measurable change in at least one electrical parameter including drain current, threshold voltage, or transconductance. The invention enables improved sensitivity, stability, and tunability for biomedical, environmental, and point-of-care sensing applications.
Disclaimer: Curated by HT Syndication.
