MUMBAI, India, Nov. 2 -- Intellectual Property India has published a patent application (202617096887 A) filed by Shanghai Vanchip Technologies Co. , Ltd. on August 11, 2026, for Radio Frequency Switch Circuit For Optimizing Voltage Distribution Uniformity Of Stacked Switch Transistors, And Chip.
Inventors include Yang, Yanmei; Li, Yanli; and Wang, Feng.
The application for the patent was published on October 30, 2026, under issue no. 44/2026.
Abstract: Disclosed in the present invention are a radio frequency switch circuit for optimizing voltage distribution uniformity of stacked switch transistors, and a chip. The radio frequency switch circuit is formed by linking and stacking sources and drains of N switch transistors, wherein N is a positive integer, and N=3; the source end and the drain end of each switch transistor are connected by means of a source-drain bias resistor; the bulk end of each switch transistor is connected to a bulk end bias resistor; when the N bulk end bias resistors are sequentially connected in series, the head end is connected to a bulk end bias voltage source; and series diode branches connected to the bulk ends of even-numbered stages of switch transistors are connected to the source ends and drain ends of respective switch transistors, and series diode branches connected to the bulk ends of odd-numbered stages of switch transistors are connected to the source ends and drain ends of respective adjacent switch transistors. When the radio frequency switch circuit is turned off, bulk end leakage currents generated by the stages of switch transistors flow into a radio frequency main path by means of the series diode branches and cancel each other out, thereby realizing the optimization of the voltage distribution uniformity of the stacked switch transistors.
Disclaimer: Curated by HT Syndication.
