MUMBAI, India, Aug. 10 -- Intellectual Property India has published a patent application (202611074318 A) filed by Malaviya National Institute Of Technology Jaipur on June 16, 2026, for Process For Preparing Vacancy-Engineered Nickel–cobalt Selenides For All-Solid-State Pseudocapacitors.
Inventors include Sumanta Kumar Meher; Siddhant Srivastav; and Neeraj Lamba.
The application for the patent was published on July 31, 2026, under issue no. 31/2026.
Abstract: The present invention discloses a high-performance asymmetric solid-state pseudocapacitor (ASSAPC) and an all-aqueous method for its fabrication. The device comprises a nanostructured bimetallic nickel–cobalt selenide (NiSe2–CoSe2) positrode and a nitrogen-doped reduced graphene oxide (N-rGO) negatrode. The NiSe2– CoSe2 material is synthesized via a controlled two-step process involving kinetically regulated precipitation followed by an anion exchange process in a completely aqueous medium, eliminating hazardous organic solvents. The resulting heterostructured material exhibits a nanocrystalline, hierarchically porous morphology with regulated selenium vacancy defects that enhance electrochemically active sites and charge-transfer kinetics. Operating via a hybrid charge storage mechanism that combines diffusion-controlled Faradaic and surface-controlled capacitive processes, the assembled solid-state device delivers low internal resistance, high energy and power densities, and exceptional long-term cycling stability. The invention provides a scalable, environmentally benign platform for next-generation compact and flexible energy storage applications.
Disclaimer: Curated by HT Syndication.
