MUMBAI, India, Aug. 10 -- Intellectual Property India has published a patent application (202621006554 A) filed by Hetalben Hirenkumar Savaliya; and Hirenkumar Vallabhbhai Savaliya on January 22, 2026, for Polycrystalline Diamond Semiconductor Wafers With Gallium Nitride And Graphene Functionalization And Fabrication Method Thereof.
Inventor includes Hirenkumar Vallabhbhai Savaliya.
The application for the patent was published on July 31, 2026, under issue no. 31/2026.
Abstract: Graphene Functionalization and Fabrication Method Thereof A polycrystalline diamond semiconductor wafer (2) is disclosed for semiconductor device integration and thermal management at industrial wafer scale. The wafer (2) is monolithic and of large diameter, having a first surface (3) configured for GaN epitaxial growth or GaN- based device fabrication with a GaN-compatible layer or GaN layer (5), and a second opposing surface (4) comprising a graphene-based layer (6). Heat generated at the GaN-side (5, 9) is conducted through the wafer (2) along a vertical heat conduction path (7) and is spread laterally by the graphene-based layer (6) along a lateral heat spreading path (8) to reduce thermal gradients. A fabrication method includes large-area Microwave Plasma Chemical Vapor Deposition (MPCVD) reactor preparation (12), polycrystalline diamond growth (15), stress control and growth modulation (16), controlled cool-down and stress relaxation (17), thickness mapping (18), planarization/Chemical Mechanical Polishing (CMP) (19), front-side preparation (20), backside graphene formation (21), and final qualification (22). FIG. 1
Disclaimer: Curated by HT Syndication.
