MUMBAI, India, July 7 -- Intellectual Property India has published a patent application (202531123641 A) filed by Indian Institute Of Technology Kharagpur on December 08, 2025, for Pin Diode-Based Rf Binary Phase Modulator In Pcb Technology.
Inventors include Mahima Patel; Shrawan Kumar Patel; Mrinal Kanti Mandal; and Debarati Sen.
The application for the patent was published on July 03, 2026, under issue no. 27/2026.
Abstract: ABSTRACT TITLE: PIN diode-based RF binary phase modulator in PCB technology A high-speed RF binary phase modulator is provided based on a reflection-type phase shifter, utilizing only two diodes. It also provides low insertion loss. It is achieved by using a reflection-type phase shifter (RTPS) with a modified load network. The load impedance can be switched between low and high by applying forward and reverse bias to the PIN diode, causing the phase shift to change by 180° for BPSK modulation for a continuous wave frequency of 10 GHz, and offering two distinct phase positions with improved performance. This recent invention presents a wideband, high-speed BPSK modulator utilizing only two diodes. Its circuitry size is very compact and simple for fabrication. The RF binary BPSK modulator is thus based on a reflection- type phase shifter suitable for X-band applications and for end use/ application in communication transmission sections, radar, and time varying systems.
Disclaimer: Curated by HT Syndication.
