MUMBAI, India, July 31 -- Intellectual Property India has published a patent application (202647088223 A) filed by Csem Centre Suisse D'Electronique Et De on July 20, 2026, for Photovoltaic Device And Its Method Of Manufacture.
Inventors include Ballif, Christophe; Lachowicz, Agata; and Paviet-Salomon, Bertrand.
The application for the patent was published on July 24, 2026, under issue no. 30/2026.
Abstract: Photovoltaic device comprising: - a silicon-based substrate (1); - a tunneling layer (2) provided upon said silicon-based substrate (1); - a passivating layer (3) provided upon said tunneling layer (2); - an electrical contact structure (12, 5, 9) situated upon said passivating layer (3); - a dielectric layer (4) provided upon said passivating layer (3); According to the invention, said electrical contact structure (12, 5, 9) comprises: - a patterned metal seed layer (12) provided upon said passivating layer (3) and defining seeded zones (14); - a metal particle paste (5) provided exclusively upon said patterned metal seed layer (12) in said seeded zones (14), said dielectric layer (4) extending over said metal particle paste (5) discontinuously; and - a metallic plating layer (9) provided upon said dielectric layer (4) in said seeded zones (14) and in electrical connection with said metal particle paste (5).
Disclaimer: Curated by HT Syndication.
