MUMBAI, India, Aug. 12 -- Intellectual Property India has published a patent application (202637052362 A) filed by Photonis France; Centre National De La Recherche Scientifique; and Ecole Centrale De Lyon on April 24, 2026, for Photodetector Comprising A Photonic Crystal Structure Optically Coupled To An Active Layer With Improved Quantum Efficiency.

Inventors include Drouard, Emmanuel; Sarelli, Eirini; Seassal, Christian; Wood, Thomas; and Bony, Pierre-Yves.

The application for the patent was published on August 07, 2026, under issue no. 32/2026.

Abstract: The invention relates to a photodetector comprising a support layer (10), a lattice structure (20) and an active layer (30). The lattice structure (20), referred to as photonic crystal structure, comprises a structured layer (22) formed of patterns (22.1) and of a continuous sublayer (22.2) with a non-zero constant thickness eccs, the patterns (22.1) widening in a direction oriented towards the continuous sublayer (22.2). Moreover, the photonic crystal structure (20) has dimensions such that the structured layer (22) forms a photonic crystal that supports at least one guided mode able to be excited by the incident light radiation of interest, the photonic crystal being optically coupled to the active layer (30) such that the guided mode is optically confined in the structured layer (22) and the active layer (30).

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