MUMBAI, India, June 22 -- Intellectual Property India has published a patent application (202631061673 A) filed by Prof. Dr. Bikash Ranjan Mohapatra on May 15, 2026, for Performance And Stability Of Thin Film Silicon Solar Cells With Optimized P-Type Layers.
Inventor includes Prof. Dr. Bikash Ranjan Mohapatra.
The application for the patent was published on June 12, 2026, under issue no. 24/2026.
Abstract: The present invention relates to enhancing the performance and stability of thin-film silicon solar cells through optimization of p-type layers in a P-i-n structure. The efficiency of conventional thin-film solar cells is often limited by recombination losses, poor charge transport, and instability in doped layers. In this invention, microcrystalline silicon solar cells are fabricated on Al-doped ZnO substrates using VHF-PECVD deposition techniques. The p-layer is optimized by controlling the trimethyl boron (TMB) doping ratio, thickness, and deposition temperature, while maintaining constant intrinsic layer conditions. The optimized p-layer thickness ranges between 22 nm and 30 nm, resulting in improved fill factor, open-circuit voltage, and overall device efficiency. The inclusion of a ZnO/Ag back reflector enhances light trapping and energy conversion. Electrical and quantum efficiency measurements confirm improved performance and long-term stability. The proposed method ensures reproducibility, scalability, and cost-effectiveness, making it suitable for large-area photovoltaic applications. This invention provides a novel approach to p-layer engineering, significantly improving thin-film solar cell efficiency and durability. FIG.1
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