MUMBAI, India, Aug. 10 -- Intellectual Property India has published a patent application (202611037040 A) filed by Indian Institute Of Technology Delhi on March 26, 2026, for Passivated Schottky Barrier Diode And Method Of Fabrication Thereof.
Inventors include Singh, Rajendra; Tiwari, Shivansh; and Naik, Tejas R..
The application for the patent was published on July 31, 2026, under issue no. 31/2026.
Abstract: The present disclosure relates to a low-temperature surface passivation technique for 4H-SiC Schottky Barrier Diodes (SBDs), intended for high-power electronic applications, employing a self-assembled monolayer (SAM) of Hydroxyl-Phenyl-Zinc-Tetra-Phenyl-Porphyrin (Zn-TPPOH) organic molecules. The process involves RCA and HF surface cleaning to introduce hydroxyl groups on the SiC surface, followed by immersion in a 0.5 mM Zn-TPPOH toluene solution to form a uniform molecular monolayer. The adsorption of Zn-TPPOH effectively passivates surface states and improves barrier uniformity. Schottky diodes fabricated on Zn-TPPOH- treated SiC exhibit enhanced performance, including an increase in Schottky barrier height by 0.1-0.2 eV and more than one order reduction in reverse leakage current at voltages as high as -200 V. This invention offers a simple, cost-effective, and thermally stable passivation approach compatible with standard semiconductor fabrication processes, providing a promising route for improving the performance and reliability of 4H-SiC-based power electronic devices.
Disclaimer: Curated by HT Syndication.
