MUMBAI, India, July 13 -- Intellectual Property India has published a patent application (202617075140 A) filed by Seoul Viosys Co. , Ltd. on June 17, 2026, for Nitride-Based Long-Wavelength Light-Emitting Diode.
Inventor includes Yoo, Hong Jae.
The application for the patent was published on July 10, 2026, under issue no. 28/2026.
Abstract: A red-light-emitting device according to one embodiment comprises: a first conductive semiconductor layer; an active area including a barrier layer and a well layer; a strain control layer disposed between the first conductive semiconductor layer and the active area; a superlattice layer disposed between the strain control layer and the active area; a second conductive semiconductor layer disposed on the active area; and an electron blocking layer disposed between the active area and the second conductive semiconductor layer, wherein the first conductive semiconductor layer and the well layer are represented by chemical formula 1, and an index value (P5) representing the band gap of the well layer and an index value (P1) representing the band gap of the first conductive semiconductor layer satisfy mathematical relation 1: (Chemical formula 1) AxByCzD(1-x-y-z) (Here, A is one element selected from Al, In and Ga, B is one element selected from Al, In and Ga, C is one element selected from Al, In and Ga, D is nitrogen, A, B and C are elements different from each other, x+y+z=0.5, and 0=x, y, z=0.5); and (mathematical relation 1) (ax+ßy+?z)P5 - (ax+ßy+?z)P1 0 (where a, ß and ? represent the band gaps of AD, BD and CD, respectively).
Disclaimer: Curated by HT Syndication.
