MUMBAI, India, July 13 -- Intellectual Property India has published a patent application (202611005610 A) filed by Indian Institute Of Technology Banaras Hindu University, Varanasi on January 20, 2026, for Multilayer Ferroelectric Thin-Film Memristive Device With Multilevel Resistive Switching, And Method Of Fabrication Thereof.
Inventors include Pal, Bhola Nath; Pramanik, Subarna; and Chakraborty, Rajarshi.
The application for the patent was published on July 10, 2026, under issue no. 28/2026.
Abstract: The present invention relates to a multilayer thin-film memristive device and its fabrication method. Specifically, the present invention concerns a ferroelectric-based resistive switching device designed to achieve stable bipolar multilevel resistive switching and synaptic functionalities for potential applications in non-volatile memory storage, neuromorphic computing, and artificial intelligence hardware systems.
Disclaimer: Curated by HT Syndication.
