MUMBAI, India, Sept. 14 -- Intellectual Property India has published a patent application (202641105212 A) filed by Vellore Institute Of Technology, Chennai on September 01, 2026, for Multi-Shell Quantum Dot Design For Enhanced Quantum Memory.
Inventors include Reena Monica P; and Rithika N.
The application for the patent was published on September 11, 2026, under issue no. 37/2026.
Abstract: The present disclosure provides a multi-shell quantum dot design for enhanced quantum memory. The multi-shell quantum dot system (102) includes a core (104) comprising gallium arsenide (GaAs) doped with pentacene (104), to provide discrete energy levels. The multi-shell quantum dot system (102) include a first shell (106) comprising aluminium gallium arsenide (AlGaAs) configured to isolate the core from environmental interactions. The multi-shell quantum dot system (102) includes a gradient shell (108) comprising an alloy of AlGaAs and Aluminum Arsenide (AlAs), surrounding the first shell (106). The multi-shell quantum dot system (102) includes an outer shell (110) comprising zinc selenide (ZnSe) configured with the gradient shell to provide insulation.
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