MUMBAI, India, Sept. 14 -- Intellectual Property India has published a patent application (202641107338 A) filed by Indian Institute Of Technology Hyderabad on September 07, 2026, for Method Of Fabrication Of A Wafer Assembly With A Dielectric Bonding Interface.
Inventors include Anjani Kumar; Kuldeep Singh; Harsh Mishra; and Shiv Govind Singh.
The application for the patent was published on September 11, 2026, under issue no. 37/2026.
Abstract: The present disclosure relates to a method of fabrication of a wafer assembly with dielectric bonding interface. The method (100) includes providing first semiconductor wafer having first bonding surface and second semiconductor wafer having second bonding surface at 102. A first layer comprising an SU-8 negative photoresist dielectric material is formed on the first bonding surface at 104, and a second layer comprising one of a silicon dioxide (SiO2) material and the SU-8 negative photoresist dielectric material is formed on the second bonding surface at 106. At 108, Nitrogen (N2) plasma treatment is performed on the first layer and the second layer to obtain a first activated surface and a second activated surface. The activated surfaces are placed in contact under room-temperature conditions (at 110) to obtain initially bonded wafer assembly, which is subsequently annealed (at 112) to obtain the wafer assembly with the dielectric bonding interface. [Figure 1]
Disclaimer: Curated by HT Syndication.
