MUMBAI, India, July 7 -- Intellectual Property India has published a patent application (202511103025 A) filed by Indian Institute Of Technology Banaras Hindu University, Varanasi on October 25, 2025, for Method Of Depositing Vertically-Oriented 2-Dimensional Rhenium Disulfide On A Substrate By Chemical Vapor Deposition.
Inventors include Das, Santanu; and Singh, Sumit Pratap.
The application for the patent was published on July 03, 2026, under issue no. 27/2026.
Abstract: The present disclosure relates to a method and apparatus for the chemical vapor deposition (CVD) growth of vertically-oriented 2- dimensional (2D) rhenium disulfide (ReS2) structures. The invention further relates to the formation of ReS2 thin films or nanoflakes having controlled vertical alignment and high density of exposed edge sites on a substrate, suitable for applications in catalysis, electronics, photodetectors, and energy storage devices.
Disclaimer: Curated by HT Syndication.
