MUMBAI, India, June 24 -- Intellectual Property India has published a patent application (202647069924 A) filed by Hitachi Energy Ltd on June 04, 2026, for Method For Producing A Power Semiconductor Device And Power Semiconductor Device.
Inventors include Dobrzynska, Jagoda Anna; and Bohacek, Jan.
The application for the patent was published on June 12, 2026, under issue no. 24/2026.
Abstract: A method for producing a power semiconductor device (1) with at least one metal support (2) and at least one power semiconductor chip (3) which are connected to one another wherein at least one metal bonding layer (4) is specified, comprising - providing the at least one metal support (2), - providing the at least one semiconductor chip (3), - applying at least one filler metal (5) on the at least one metal support (2) or the at least one power semiconductor chip (3), - applying a plurality of microparticles (6) on the at least one metal support (2), the at least one power semiconductor chip (3) or the at least one filler metal (5), - arranging the at least one metal support (2) on the at least one power semiconductor chip (3), and - generating the at least one metal bonding layer (4) by a thermal treatment of the at least one filler metal (5), wherein - the at least one metal bonding layer (4) has a uniform thickness (2), which is dependent on a size of the microparticles (6). Further, a power semiconductor device (1) is specified.
Disclaimer: Curated by HT Syndication.
