MUMBAI, India, Sept. 28 -- Intellectual Property India has published a patent application (202631112334 A) filed by National Institute Of Technology Meghalaya on September 18, 2026, for Method For Depositing Mosaic Heteroepitaxial Chalcopyrite Thin Films And Fabricating Photodetectors Therefrom.
Inventors include Rudra Narayan Chakraborty; and Kasilingam Senthilkumar.
The application for the patent was published on September 25, 2026, under issue no. 39/2026.
Abstract: A method of fabricating a mosaic heteroepitaxial photodetector device and the resulting photodetector structure are disclosed. The method includes providing a n-type (100) silicon substrate and depositing a mosaic epitaxial chalcopyrite copper iron disulfide thin film layer thereon, with an out-of-plane [112] crystallographic orientation. The resulting photodetector demonstrates broadband optoelectronic sensitivity across wavelengths ranging from 525 nm to 1200 nm, high-speed microsecond response times between 42 µs and 80 µs at light modulation frequencies of 1-3 kHz, and a peak specific detectivity reaching at least 4.8 × 1010 Jones under 1050 nm optical illumination at 1 kHz. The device provides scalable utility for high-speed optical detection, near-infrared sensing, imaging, spectroscopy, optical communication, and silicon-integrated optoelectronic systems.
Disclaimer: Curated by HT Syndication.
