MUMBAI, India, Sept. 28 -- Intellectual Property India has published a patent application (202631112322 A) filed by National Institute Of Technology Meghalaya on September 18, 2026, for Method For Controlling Sulphur Diffusion At Molybdenum Back Contacts In Sulphur-Based Chalcogenide Thin-Film Solar Cells.
Inventors include Joyshree Handique; Rudra Narayan Chakraborty; and Kasilingam Senthilkumar.
The application for the patent was published on September 25, 2026, under issue no. 39/2026.
Abstract: The present disclosure provides a method for controlling sulphur diffusion at the molybdenum (Mo) back contact interface in sulphur-based chalcogenide thin-film solar cells. The solar cell heterostructure comprises a Mo back contact layer formed on glass substrate, a phase-pure iron (Fe) buffer layer deposited on the Mo back contact, and a sulphur-rich chalcogenide active layer, iron disulphide (FeS2) deposited over the Fe buffer layer. During thermal processing and deposition of the active layer, the intermediate Fe buffer layer acts as a physical diffusion barrier that traps and blocks diffusing reactive sulphur species from reaching the underlying Mo back contact. The trapped sulphur promotes additional FeS2 phase formation, while localised inter-diffusion at the back contact interface forms a highly conductive (Fe-Mo) alloy phase. The said method suppresses the growth of n-type MoS2 interfacial layer together with the formation of additional Fe-Mo alloy, which preserves back contact conductivity and enhances photogenerated hole extraction across the heterostructure interface.
Disclaimer: Curated by HT Syndication.
