MUMBAI, India, Oct. 5 -- Intellectual Property India has published a patent application (202614025077 A) filed by Theion Gmbh on March 03, 2026, for Low-Tortuous Glass-Crystalline Chalcogenide-Based Electrode With Ordered Porosity Induced By Irradiation Processes And Method Of Producing Thereof.
Inventors include Marek Slavik; Marin Puget; and Aamir Iqbal Waidha.
The application for the patent was published on October 02, 2026, under issue no. 40/2026.
Abstract: A low tortuosity glass-crystalline 3D chalcogenide cathode exhibiting hierarchical/ordered porosity and method for preparing such a electrode body for use in secondary batteries, comprising the steps of providing an chalcogenide-based, substrate (201), selectively inducing 10 the conversion of the chalcogenide body into suitable allotropic forms having different physicochemical properties by applying structurally patterning the substrate (201) by means of photon and or electron irradiation source, wherein the irradiation treated area of the crystalline chalcogenide body is pre-dominantly transitioned into glass/amorphous allotropic forms (204) defined as in-soluble in suitable solvent/etching agents and masked/protected area of the 15 chalcogenide body stays crystalline (202a) which is defined as soluble in suitable solvent/etching agent – otherwise defined as negative lithography wherein, the high-energy radiation is directed onto the substrate (201) in an orientation largely perpendicular to the widest extension of the substrate (201).
Disclaimer: Curated by HT Syndication.
