MUMBAI, India, Oct. 5 -- Intellectual Property India has published a patent application (202631114241 A) filed by Assam Down Town University on September 24, 2026, for Low-Temperature In-Situ Growth And Metal Decoration Of Fiber-Anchored Nanowire Architectures On Flexible Textile Substrates.
Inventors include Mr. Devabrata Sarmah; Dr. Pulakesh Chetia; Dr. Arnab Kr. Sarkar; Ms. Nabanita Daimary; Prof. Sunandan Baruah; and Ms. Nairika Deka.
The application for the patent was published on October 02, 2026, under issue no. 40/2026.
Abstract: LOW-TEMPERATURE IN-SITU GROWTH AND METAL DECORATION OF FIBER-ANCHORED NANOWIRE ARCHITECTURES ON FLEXIBLE TEXTILE SUBSTRATES Abstract of the Invention The present invention relates to a low-temperature, binder-free process for functionalizing a flexible textile substrate (101) by direct in-situ growth of nanowire structures (106) on indi-vidual textile fibers (102) followed by in-situ metal decoration. The process comprises sur-face seeding of the textile fibers (102) to generate nucleation sites (104), low-temperature growth of the nanowire structures (106) directly from the nucleation sites (104), contacting the nanowire-functionalized substrate with a metal-ion precursor, and reducing the metal ions to form metal nanostructures (109) directly on the nanowire structures (106). The result-ing hierarchical fiber–nanowire–metal architecture (110) is structurally integrated with the textile fibers (102) without a polymeric binder, adhesive matrix, or conventional coating layer, thereby providing increased surface area and structural stability while reducing de-tachment of functional nanomaterials. The process substantially preserves flexibility, porosi-ty, breathability, and mechanical integrity and is applicable to polymeric and cellulose-based textiles for protective, healthcare, filtration, and PPE applications.
Disclaimer: Curated by HT Syndication.
