MUMBAI, India, Sept. 7 -- Intellectual Property India has published a patent application (202641104327 A) filed by Gorla Venkata Ganesh; Britto Martin Paul Naricetti; and Koneru Lakshmaiah Education Foundation on August 30, 2026, for Low Bias Voltage Micro Heater Enabled Nitrogen Dioxide Gas Sensor.
Inventors include Britto Martin Paul Naricetti; and G. V. Ganesh.
The application for the patent was published on September 04, 2026, under issue no. 36/2026.
Abstract: The present invention provides a low bias voltage micro heater enabled nitrogen dioxide (NO2) gas sensor, the design of which is established by finite element method based multi-physics simulation carried out prior to fabrication. The sensor comprises a silicon substrate, a silicon dioxide insulating layer, a tungsten micro heater configured as a three finger meander structure, a set of inter digital electrodes, and a tungsten oxide based nano composite sensing layer. The simulation is carried out in a multi-physics environment comprising Heat Transfer in Solids, Electric Currents, and Electric Currents in Layered Shells, with an extremely fine mesh and a bias voltage sweep over 0 V to 0.2 V, and comprises three successive parametric studies directed respectively to the micro heater material, the micro heater geometry and the sensing material. Tungsten is selected in preference to silver and copper by reason of the contamination risk presented by the latter, the three finger meander structure is selected by reason of its superior temperature and total net energy rate, and tungsten oxide is selected by reason of its wide variation of resistance with electrical conductivity. The design so arrived at attains an operating temperature of substantially 453.15 K at an applied bias voltage of substantially 0.2 V, which is lower by approximately one order of magnitude than that of comparable prior art devices, whereby the requirement for additional charge pump circuitry is dispensed with.
Disclaimer: Curated by HT Syndication.
