MUMBAI, India, July 7 -- Intellectual Property India has published a patent application (202618069132 A) filed by Seoul Viosys Co. , Ltd. on June 02, 2026, for Light Emitting Diode.
Inventors include Kim, Jae Kwon; Heo, Min Chan; Kim, Kyoung Wan; Kim, Jong Kyu; Kim, Hyun A Number; and Lee, Joon Sup.
The application for the patent was published on July 03, 2026, under issue no. 27/2026.
Abstract: A light emitting diode according to an exemplary embodiment includes: a first conductivity type semiconductor layer; a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer, in which the active layer generates light having a peak wavelength of about 500 nm or less, the lower insulation layer includes a distributed Bragg reflector, the lower insulation layer has a high reflection wavelength band continuously exhibiting reflectances of 90% or more in a wavelength range of the visible region, reflectances in a first wavelength region including a peak wavelength of light generated in the active layer within the high reflection wavelength band are higher than those in a second wavelength region within a range of 554 nm to 700 nm, and the first wavelength region is located in a region of wavelengths shorter than 554 nm.
Disclaimer: Curated by HT Syndication.
