MUMBAI, India, Oct. 5 -- Intellectual Property India has published a patent application (202621098126 A) filed by Visvesvaraya National Institute Of Technology Vnit, Nagpur on August 13, 2026, for Lead-Free Pr And V Co-Doped Aurivillius Ferroelectric Ceramic Material, Capacitor And Process For Preparation Thereof.
Inventors include Subohi, Oroosa; and Sharma, Astha.
The application for the patent was published on October 02, 2026, under issue no. 40/2026.
Abstract: The present invention relates to a lead-free Pr and V co-doped SrBi6Nb2Ti3021 Aurivillius ferroelectric ceramic material, a ferroelectric ceramic capacitor comprising the same, and processes for preparation thereof. The invention provides a 2–3 mixed-layer intergrowth Aurivillius phase ceramic material having the formula SrBi5.92Pr0.08Nb2Ti2.96V0.04O21 (SPBVNT) and a ferroelectric ceramic capacitor fabricated therefrom. The SPBVNT ceramic material exhibits relaxor ferroelectric behaviour characterized by slim polarization-electric field (P–E) hysteresis loops, low remanent polarization, and high maximum polarization, thereby providing enhanced recoverable energy density and energy storage efficiency. The material further exhibits improved electric breakdown strength and optimized ferroelectric domain switching characteristics. The invention additionally provides processes for synthesis of the SPBVNT ceramic material and fabrication of the ferroelectric ceramic capacitor, suitable for energy storage and electronic device applications.
Disclaimer: Curated by HT Syndication.
