MUMBAI, India, July 31 -- Intellectual Property India has published a patent application (202647088702 A) filed by Qualcomm Incorporated on July 21, 2026, for Integrated Device Comprising Extended Metallization Region For Pillar Interconnects.
Inventors include Patil, Aniket; He, Dongming; and Lisk, Durodami.
The application for the patent was published on July 24, 2026, under issue no. 30/2026.
Abstract: An integrated device comprising a die substrate; a die interconnection portion coupled to the die substrate, wherein the die interconnection portion comprises: at least one die dielectric layer; and a plurality of die interconnects, wherein the die interconnection portion comprises: an inner die interconnection portion; and a periphery die interconnection portion, wherein the periphery die interconnect portion is free of the plurality of die interconnects; a plurality of pad interconnects coupled to the die interconnection portion; a plurality of metallization interconnects coupled to the plurality of pad interconnects, wherein at least one metallization interconnect from the plurality of metallization interconnects, vertically overlaps with the periphery die interconnection portion, and a plurality of pillar interconnects coupled to the plurality of metallization interconnects.
Disclaimer: Curated by HT Syndication.
