MUMBAI, India, Sept. 7 -- Intellectual Property India has published a patent application (202611084055 A) filed by Indian Institute Of Technology Delhi on July 08, 2026, for Integrated Circuit And Method For Generating A Temperature-Compensated Reference Current And A Temperature-Compensated Reference Voltage.
Inventors include Shouri Chatterjee; and Raghav Bansal.
The application for the patent was published on September 04, 2026, under issue no. 36/2026.
Abstract: The present invention discloses an integrated circuit (100) and method (400) for generating a temperature-compensated reference current and a temperature- compensated reference voltage. The integrated circuit (100) includes a single bipolar junction transistor (BJT) (102) configured to generate an emitter-base voltage (VEB), a voltage divider (104) configured to generate a fractional emitter-base voltage, and a voltage-to-current conversion circuit (106) configured to generate a complementary-to-absolute-temperature (CTAT) current. A proportional-to-absolute-temperature (PTAT) current generation circuit including a PTAT-embedded beta- multiplier (108) generates a PTAT current using the single BJT (102). A summation node (110) combines the CTAT current and the PTAT current to generate a temperature-compensated reference current (IREF). An output voltage generation circuit (112) generates a temperature-compensated reference voltage from the reference current. The integrated circuit operates at a supply voltage below 1 V and provides substantially zero temperature coefficient reference current and reference voltage with reduced area and power.
Disclaimer: Curated by HT Syndication.
