MUMBAI, India, Aug. 31 -- Intellectual Property India has published a patent application (202514122741 A) filed by Alpha And Omega Semiconductor International Lp on December 05, 2025, for Insulated Gate Bipolar Superjunction Transistor.
Inventors include Wang, Wayne; Sankaranarayanan, Sandeep; Padmanabhan, Karthik; Bobde, Madhur; and Shenoy, Praveen.
The application for the patent was published on August 28, 2026, under issue no. 35/2026.
Abstract: Apparatus and associated methods relate to an insulated gate bipolar superjunction transistor (IGBST). In an illustrative example, a substrate having a predefined insulated gate bipolar transistor (IGBT) section and a metal-oxide-semiconductor field-effect transistor (MOSFET) section is provided. A number of layers of dopant to be implanted on the substrate, for example, is determined to form a superjunction structure across the IGBT section and the MOSFET section. For example, the number of layers may range from 1-15. In some implementations, for each layer of the superjunction structure, a layer of superjunction P columns through masked p+ implant and a corresponding layer of superjunction N columns through masked n+ implant are formed. For example, the superjunction P columns and the superjunction N columns are uniformly distributed across the substrate. Various embodiments may advantageously provide a smooth transition of output power from the IGBST between a low current to a high current input.
Disclaimer: Curated by HT Syndication.
