MUMBAI, India, July 24 -- Intellectual Property India has published a patent application (202621066145 A) filed by Nikhil Saytode; and Dr. Shivangi Chandrakar on May 26, 2026, for Innovative Design And Comparative Analysis Of Ultra-Fast Low Power Sense Amplifiers In Deep Submicron Cmos Technology.
Inventors include Nikhil Saytode; and Dr. Shivangi Chandrakar.
The application for the patent was published on July 17, 2026, under issue no. 29/2026.
Abstract: ABSTRACT [1] Our Invention “INNOVATIVE DESIGN AND COMPARATIVE ANALYSIS OF -UFLATSTRA LOW-POWER SENSE AMPLIFIERS IN DEEP SUBMICRON CMOS TECHNOLOGY” has been claimed. The invention discloses an advanced low-power and ultra-fast sensing architecture for Static Random Access Memory (SRAM) applications using deep submicron CMOS technology. The proposed system introduces an optimized sense amplifier structure capable of improving sensing speed, reducing propagation delay, minimizing power dissipation, and enhancing memory read stability under varying bit-line capacitances and supply voltages. The proposed design integrates latch-based differential sensing, positive feedback regeneration, and pass transistor logic to efficiently amplify very small voltage differences appearing on SRAM bit lines. The architecture significantly reduces sensing delay and power-delay product compared with conventional cross-coupled, clamped bit-line, alpha latch, and hybrid sense amplifiers. The invention further incorporates optimized transistor sizing, reduced parasitic loading, and efficient precharge circuitry to achieve reliable high-speed operation under low-voltage conditions. The proposed sense amplifier is suitable for high-performance SRAM arrays, cache memories, embedded systems, portable electronics, and low-power VLSI applications.
Disclaimer: Curated by HT Syndication.
