MUMBAI, India, Aug. 12 -- Intellectual Property India has published a patent application (202647094369 A) filed by Qualcomm Incorporated on August 04, 2026, for Impure Indium Phosphide Semiconductor Substrate On A Silicon Wafer.
Inventors include Dutta, Ranadeep; Kim, Jonghae; and Lan, Je-Hsiung.
The application for the patent was published on August 07, 2026, under issue no. 32/2026.
Abstract: Aspects disclosed in the detailed description include an impure Indium Phosphide (InP) semiconductor substrate and a method of manufacturing the substrate. A semiconductor substrate comprises a silicon layer (302) and an impure InP layer (304) adjacent to the silicon layer. The impure InP layer (304) may be epitaxially grown on a Silicon (Si) nanoridge base or directly bonded to the silicon layer after being epitaxially grown and cleaved. Typically a silicon wafer is used, which is provided with STI regions with V-shaped grooves between them, InGaAs (314) is grown in and over the trenches, followed by the growth of the InP layer. Utilizing an impure InP layer advantageously provides structural strength to be deployed in a 300 millimeter wafer process while achieving the electrical and thermal characteristic of InP it provides in a semiconductor substrate.
Disclaimer: Curated by HT Syndication.
