MUMBAI, India, Oct. 5 -- Intellectual Property India has published a patent application (202517127322 A) filed by Cxmt Corporation on December 16, 2025, for Hybrid Bonding Structure, Manufacturing Method Therefor, And Semiconductor Device.
Inventor includes Fang, Qingchun.
The application for the patent was published on October 02, 2026, under issue no. 40/2026.
Abstract: A hybrid bonding structure, a manufacturing method therefor, and a semiconductor device. The hybrid bonding structure comprises: a dielectric layer, comprising a first dielectric layer and a second dielectric layer which are arranged in a bonded configuration; a bonding interface layer, located between the first dielectric layer and the second dielectric layer; a metal structure, located in the dielectric layer; and a diffusion barrier layer, located in the dielectric layer, the diffusion barrier layer isolating the bonding interface layer. The hybrid bonding structure can improve device performance.
Disclaimer: Curated by HT Syndication.
