MUMBAI, India, Sept. 28 -- Intellectual Property India has published a patent application (202648113923 A) filed by Transphorm Technology, Inc. on September 23, 2026, for Half-Bridge Circuit And Packaged Hybrid Iii-Nitride Device Having High Reverse Current Capability.
Inventors include Wu, Yifeng; and Gritters, John Kirk.
The application for the patent was published on September 25, 2026, under issue no. 39/2026.
Abstract: A half-bridge circuit and a packaged electronic component comprising a hybrid III-Nitride device in a cascode configuration with a low-voltage enhancement-mode transistor and a high-voltage III-Nitride depletion-mode transistor are disclosed. The circuit includes a high-side switch, a low-side switch, and an inductor. During reverse conduction mode while the low-side switch is biased OFF, the device handles a reverse DC current greater than 50A. Upon subsequent forward conduction, the on-resistance increase of the III-Nitride depletion-mode transistor is maintained at less than 5%. The depletion-mode transistor features a gate electrode electrically connected to a conductive silicon substrate directly mounted onto a conductive structural package base tied to circuit ground, providing high forward blocking voltage and improved reverse current reliability. Fig.5
Disclaimer: Curated by HT Syndication.
