MUMBAI, India, Oct. 5 -- Intellectual Property India has published a patent application (202611101520 A) filed by Dr. Faraz Hashmi; Prof. M Nizamuddin; Dr. Mohd Taazeem Ansari; Dr. Hammadur Rub Ansari; and Prof. Mohammad Asrar Izhari on August 22, 2026, for Graphene Nanoribbon Field Effect Transistor-Based Three Stage Operational Amplifier With Improved Gain And Bandwidth.
Inventors include Dr. Faraz Hashmi; Prof. M Nizamuddin; Dr. Mohd Taazeem Ansari; Dr. Hammadur Rub Ansari; and Prof. Mohammad Asrar Izhari.
The application for the patent was published on October 02, 2026, under issue no. 40/2026.
Abstract: The present invention relates to a Graphene Nanoribbon field effect ttransistor based three stage operational amplifier with improved gain and bandwidth. The present invention relates to the operational amplifier (100) comprising a plurality of GNRFETs (102) arranged in a three-stage amplification topology, wherein the three-stage amplification topology, comprises a first differential amplification stage for receiving a non-inverting input signal and an inverting input signal and generating a first amplified differential output, a second differential amplification stage coupled to the first differential amplification stage for receiving the first amplified differential output and generating a second amplified output and a common-source amplification stage coupled to the second differential amplification stage for receiving the second amplified output and generating an amplified output signal.
Disclaimer: Curated by HT Syndication.
