MUMBAI, India, June 30 -- Intellectual Property India has published a patent application (202347040884 A) filed by International Business Machines Corporation on June 15, 2023, for Field Effect Transistor (fet) Devices.
Inventors include Vega, Reinaldo; Ando, Takashi; Chi, Cheng; and Adusumilli, Praneet.
The application for the patent was published on June 26, 2026, under issue no. 26/2026.
Abstract: A field effect transistor (FET) device is provided. The device includes an isolation region on a support substrate that separates a first back gate from a second back gate, and a gate dielectric layer on a first channel region and a second channel region. The device further includes a conductive gate layer having a work function value and a ferroelectric layer on the gate dielectric layer, wherein the first back gate can adjust a threshold voltage for the first channel region, and the second back gate can adjust a threshold voltage for the second channel region.
Disclaimer: Curated by HT Syndication.
