MUMBAI, India, July 7 -- Intellectual Property India has published a patent application (202647077313 A) filed by Qualcomm Incorporated on June 23, 2026, for Enhanced Integrated Circuit Heat Dissipation Using Inactive Metal Lines.
Inventors include Lepaksha, Hithesh Hassan; Nandanwar, Darshan Kumar; and Desai, Kartik Gunvantbhai Number.
The application for the patent was published on July 03, 2026, under issue no. 27/2026.
Abstract: An electronic device includes one or more substrates carrying active circuitry; a heat sink structure; one or more thermal through- substrate vias (TTSVs) forming a first set of one or more thermally conductive paths between the one or more substrates and the heat sink structure; and one or more metallization lines disposed in the one or more substrates, wherein in a first mode of operation of the active circuitry, the one or more metallization lines carry active signals of the active circuitry, and in a second mode of operation of the active circuitry in which the one or more metallization lines do not carry active signals of the active circuitry, the one or more metallization lines are connected as heat-conductive branches forming a second set of one or more thermally conductive paths in thermal contact with the first set of one or more thermally conductive paths.
Disclaimer: Curated by HT Syndication.
